Display device and method of manufacturing display device

ABSTRACT

A display device according to an embodiment of the present invention includes a display panel having a through hole in a display area including a plurality of pixels. The display panel includes a substrate, and an organic light-emitting diode including a first electrode provided above the substrate for each of the pixels, a second electrode provided over the plurality of pixels, and an organic electroluminescence layer arranged between the first electrode and the second electrode. The through hole penetrates at least the second electrode, and the second electrode includes an oxidized part exposed at an inner surface of the through hole.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese Application JP2017-228569 filed on Nov. 29, 2017, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One or more embodiments of the present invention relate to a displaydevice and a method of manufacturing a display device.

2. Description of the Related Art

A display device such as an organic electroluminescence display devicehas a display panel in which a thin-film transistor, an organiclight-emitting diode provided for each pixel and the like are formed ona substrate.

JP 2008-139025 A discloses a configuration in which a display panel has,in its display area, a through hole for exposing a structure other thanthe display panel.

SUMMARY OF THE INVENTION

However, in the conventional configuration as described above, a defectmay occur in an organic electroluminescence layer included in theorganic light-emitting diode. That is, in the conventional configurationas described above, moisture may infiltrate via an upper electrode filmwhich is included in the organic light-emitting diode and is exposed atthe through hole. Therefore, the defect may occur in the organicelectroluminescence layer.

In view of the foregoing problem, an object of an embodiment of theinvention is to suppress the occurrence of a defect in the organicelectroluminescence layer.

1. A display device according to an embodiment of the present inventionincludes a display panel having a through hole in a display areaincluding a plurality of pixels. The display panel includes a substrate,and an organic light-emitting diode including a first electrode filmprovided above the substrate for each of the pixels, a second electrodefilm provided over the plurality of pixels, and an organicelectroluminescence layer arranged between the first electrode film andthe second electrode film. The through hole penetrates at least thesecond electrode film, and the second electrode film includes anoxidized part exposed at an inner surface of the through hole.

2. In the display device according to the above-mentioned item 1, thethrough hole may also penetrate the substrate.

3. In the display device according to the above-mentioned item 1, thesecond electrode film may have a shape as a single film that surroundsperipheries of the through hole.

4. The display device according to the above-mentioned item 1 mayfurther include: a pixel circuit provided in the pixels; a video signalline which supplies a voltage corresponding to a video signal, to thepixel circuit; and a scanning signal line which applies a voltage to alighting thin-film transistor included in the pixel circuit. The videosignal line and the scanning signal line arranged next to the throughhole may be curved to detour around the through hole.

5. In the display device according to the above-mentioned item 1, astructure other than the display panel may be arranged at a positioncorresponding to the through hole.

6. In the display device according to the above-mentioned item 5, thestructure may include at least one of camera, earphone, and microphone.

7. A method of manufacturing a display device according to an embodimentof the present invention is a method of manufacturing a display devicethat includes a display panel having a display area including aplurality of pixels. The method includes: forming an organiclight-emitting diode which includes a first electrode film providedabove a substrate for each of the pixels, a second electrode filmprovided over the plurality of pixels, and an organicelectroluminescence layer arranged between the first electrode film andthe second electrode film; providing a through hole which exposes a partof the second electrode film, in the display area; and oxidizing a partof the second electrode film exposed at an inner surface of the throughhole.

8. In the method of manufacturing a display device according to theabove-mentioned item 7, a laser beam may be irradiated in the displayarea, thus simultaneously carrying out the providing the through hole,and the oxidizing a part of the second electrode film.

9. In the method of manufacturing a display device according to theabove-mentioned item 7, the second electrode film may be formed by asingle film forming process using a single mask.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing a schematic configuration of adisplay device according to an embodiment.

FIG. 2 is a schematic plan view showing a display panel in the displaydevice according to the embodiment.

FIG. 3 is a schematic vertical cross-sectional view showing the displaypanel, taken along III-III shown in FIG. 2.

FIG. 4 is a schematic vertical cross-sectional view showing the displaypanel, taken along IV-IV shown in FIG. 2.

FIG. 5 is a schematic plan view showing peripheries of a through holeforming area in the display panel according to the embodiment.

DETAILED DESCRIPTION OF THE INVENTION First Embodiment

Hereinafter, an embodiment of the invention will be described withreference to the drawings.

The disclosure is simply an example. Any change that a person skilled inthe art can easily think of without departing from the spirit of theinvention should be included in the scope of the invention. In order toclarify the explanation, the drawings may schematically show each partin terms of width, thickness, shape and the like, compared with theactual configurations. However, the drawings are simply an example andshould not limit the interpretation of the invention. Also, in thespecification and drawings, a component similar to the one already described with reference to a previously described drawing maybe denotedby the same reference sign, and detailed explanation of such a componentmaybe omitted where appropriate. Embodiments of the invention can becombined together unless stated otherwise.

In the detailed description of the invention, the term “above/on” or“below/under” to prescribe a positional relation between one componentand another component includes not only the case where one component isdirectly above/on or below/under another component but also the casewhere a still another component is provided between the two componentsunless stated otherwise.

A display device 2 according to this embodiment is, for example, anorganic electroluminescence display device and mounted on a television,personal computer, mobile terminal, mobile phone or the like. FIG. 1 isa schematic view showing a schematic configuration of the display device2 according to this embodiment. The display device 2 has a pixel arrayunit 4 which displays an image, and a drive unit which drives the pixelarray unit 4. The display device 2 may have a base material formed ofglass or the like. The display device 2 may be a flexible display havingflexibility. In such a case, the display device 2 may have a basematerial formed of a flexible resin film. The display device 2 has awiring layer including a wiring provided inside or above the basematerial.

In the pixel array unit 4, an organic light-emitting diode 6 and a pixelcircuit 8 are arranged in the form of a matrix corresponding to pixels.The pixel circuit 8 includes a lighting thin-film transistor 10, a drivethin-film transistor 12, a capacitor 14, and the like.

On the other hand, the drive unit includes a scanning line drive circuit20, a video line drive circuit 22, a drive power supply circuit 24, anda controller 26. The drive unit drives the pixel circuit 8 and controlsthe light emission of the organic light-emitting diode 6.

The scanning line drive circuit 20 is connected to a scanning signalline 28 provided for each horizontal array of pixels (pixel row). Thescanning line drive circuit 20 selects the scanning signal line 28 inorder in response to a timing signal inputted from the controller 26 andapplies a voltage to the selected scanning signal line 28 to turn on thelighting thin-film transistor 10.

The video line drive circuit 22 is connected to a video signal line 30provided for each vertical array of pixels (pixel column). The videoline drive circuit 22 has a video signal inputted from the controller 26and outputs to each video signal line 30 a voltage corresponding to thevideo signal of the selected pixel row in accordance with the selectionof the scanning signal line 28 by the scanning line drive circuit 20.The voltage is written into the capacitor 14 via the lighting thin-filmtransistor 10 in the selected pixel row. The drive thin-film transistor12 supplies a current corresponding to the written voltage, to theorganic light-emitting diode 6. This causes the organic light-emittingdiode 6 of the pixel corresponding to the selected scanning signal line28 to emit light.

The drive power supply circuit 24 is connected to a drive power supplyline 32 provided for each pixel column and supplies a current to theorganic light-emitting diode 6 via the drive power supply line 32 andthe drive thin-film transistor 12 of the selected pixel row.

Here, a lower electrode film which is a first electrode film of theorganic light-emitting diode 6 is connected to the drive thin-filmtransistor 12. On the other hand, an upper electrode film which is asecond electrode film of each organic light-emitting diode 6 is formedof an electrode that is used in common by the organic light-emittingdiodes 6 of all the pixels. In a case where the lower electrode film isformed as the anode, a high electric potential is inputted thereto, andthe upper electrode film is the cathode, to which a low electricpotential is inputted. In a case where the lower electrode film isformed as the cathode, a low electric potential is inputted thereto, andthe upper electrode film is the anode, to which a high electricpotential is inputted.

FIG. 2 is a schematic plan view showing a display panel 40 in thisembodiment. The display panel 40 has a display area 42 where the organiclight-emitting diode 6 provided in the pixel array unit 4 is arranged,and a frame area 44 arranged on the outer side of the display area 42.Here, the upper electrode film of the organic light-emitting diode 6 isformed in almost the entirety of the display area 42. That is, the upperelectrode film is arranged over a plurality of pixels.

As shown in FIG. 2, a flexible printed circuit board 52 is connected toan organic light-emitting diode structure layer 300 including theorganic light-emitting diode 6. On the flexible printed circuit board52, a driver integrated circuit 48 forming the drive unit is mounted.The flexible printed circuit board 52 is connected to the scanning linedrive circuit 20, the video line drive circuit 22, the drive powersupply circuit 24, and the controller 26 or the like.

The display panel 40 has a through hole 200 arranged at a positioncorresponding to a structure which doesn't include the display panel 40,such as a camera, earphone, or microphone. In this embodiment, thedisplay panel 40 has a through hole 200A arranged at a positioncorresponding to an earphone, a through hole 200B arranged at a positioncorresponding to a microphone, and a through hole 200C arranged at aposition corresponding to a camera. The number and shape of throughholes 200 are not limited to those in the embodiment. The structure isnot limited to the camera, earphone, and microphone. The structure maybe arranged below the through hole 200. At least a part of the structuremay be arranged inside the through hole 200.

As described above, the upper electrode film of the organiclight-emitting diode 6 is formed over the pixels in substantially theentirety of the display area 42. Therefore, apart of the upper electrodefilm is exposed at the inner surfaces of the through hole 200A, thethrough hole 200B, and the through hole 200C.

FIG. 5 is a schematic plan view showing peripheries of the area wherethe through hole 200 is formed in the display panel 40 in thisembodiment. FIG. 5 shows the positional relation between the throughhole 200, and the scanning signal line 28 and the video signal line 30.

As shown in FIG. 5, the scanning signal line 28 is arranged in a firstdirection and the video signal line 30 is arranged in a second directionthat intersects the first direction. A subpixel is formed in arectangular area surrounded by the scanning signal line 28 and the videosignal line 30. As described above with reference to FIG. 1, thescanning signal line 28 and the video signal line 30 are electricallyconnected to the pixel circuit 8 provided in each subpixel.

As shown in FIG. 5, the scanning signal line 28 and the video signalline 30 are arranged in such a way as to detour around the area wherethe through hole 200 is formed. That is, the scanning signal line 28 andthe video signal line 30 arranged next to the through hole 200 arecurved to detour around the through hole 200. Such a configurationenables the scanning signal line 28 to electrically connect scanningline drive circuit 20 and the pixel circuit 8 shown in FIG. 1 andenables the video signal line 30 to electrically connect the video linedrive circuit 22 and the pixel circuit 8 shown in FIG. 1, without thethrough hole 200 disconnecting the scanning signal line 28 and the videosignal line 30.

FIG. 3 is a schematic vertical cross-sectional view showing the displaypanel 40, taken along III-III shown in FIG. 2, that is, from a part ofthe display area 42 to the frame area 44. As shown in FIG. 3, thedisplay panel 40 according to this embodiment has an array substrate 50.In this embodiment, polyimide resin is used as the material forming thearray substrate 50. Also, another resin material may be used as thematerial forming the array substrate 50.

Above the array substrate 50, a three-layer structure including a firstsilicon oxide film 54, a first silicon nitride film 56 and a secondsilicon oxide film 58 is provided as an undercoat layer. The firstsilicon oxide film 54, which is the lowermost layer, is provided toimprove adhesion to the array substrate 50. The first silicon nitridefilm 56, which is the middle layer, is provided as a block film againstmoisture and impurities from outside. The second silicon oxide film 58,which is the uppermost layer, is provided as a block film which preventshydrogen atoms contained in the first silicon nitride film 56 from beingdiffused to the semiconductor layer side. It should be noted that theundercoat layer is not particularly limited to this structure and may bea structure having more layers stacked or may be a single-layerstructure or two-layer structure.

Above the undercoat layer, the drive thin-film transistor 12 isprovided. The drive thin-film transistor 12 has a structure in which alow-concentration impurity region is provided between a channel regionand source and drain regions. In this embodiment, a silicon oxide filmis used as a gate insulating film 60, and a first wiring 62 constitutedby a multilayer structure of Ti and Al is used as a gate electrode. Thefirst wiring 62 also functions as a storage capacitance line in additionto the function as the gate electrode of the drive thin-film transistor12. That is, the first wiring 62 is used to form a storage capacitancewith a polysilicon film 64.

Above the drive thin-film transistor 12, a second silicon nitride film66 and a third silicon oxide film 68 as interlayer insulating films arestacked. Further, a second wiring 70, forming source and drainelectrodes and a lead wiring, is formed. In this embodiment, the secondwiring 70 has a three-layer structure of Ti, Al and Ti. The interlayerinsulating films, an electrode formed by an electrically conductivelayer in the same layer as the first wiring 62 and an electrode formedby an electrically conductive layer in the same layer as the source anddrain wirings of the drive thin-film transistor 12 form a storagecapacitance. The lead wiring extends to an end part of the peripheraledge of the array substrate 50 and forms a terminal for connecting theflexible printed circuit board 52 and the driver integrated circuit 48shown in FIG. 2.

Above the drive thin-film transistor 12, a flattening film 72 is formed.As the flattening film 72, an organic material such as photosensitiveacrylic resin is often used. The flattening film formed of the organicmaterial 72 has higher surface flatness than an inorganic insulatingmaterial film formed by a CVD (chemical vapor deposition) method or thelike.

The flattening film 72 is removed at a pixel contact part where thedrive thin-film transistor 12 and a lower electrode film 80 included inthe organic light-emitting diode 6 are electrically connected to eachother and at an end part of the frame area 44. At the pixel contactpart, the upper surface of the second wiring 70 exposed by the removalof the flattening film 72 is covered with a transparent conductive film74 formed of ITO (indium tin oxide).

Subsequently, a third wiring 76 is provided in the same layer as thetransparent conductive film 74. In this embodiment, the third wiring 76is provided as a three-layer structure of Mo, Al and Mo and is used toform a peripheral lead wiring and a capacitance element providedadditionally in the pixel. Covering the upper surface of the secondwiring 70 exposed after the removal of the flattening film 72, with thetransparent conductive film 74 as described above, also serves toprotect the exposed surface of the second wiring 70 from the process ofpatterning the third wiring 76.

The upper surfaces of the transparent conductive film 74 and the thirdwiring 76 are first covered with a third silicon nitride film 78.Subsequently, near the pixel contact part of the transparent conductivefilm 74 in the display area 42, an opening is provided in the thirdsilicon nitride film 78. A part of the upper surface of the transparentconductive film 74 is thus exposed. In this embodiment, an opening isprovided in the third silicon nitride film 78 also in the frame area 44.The upper surface of the flattening film 72 is exposed at the opening.

Subsequently, the lower electrode film 80 to be the pixel electrode isformed in such a way as to be connected to the upper surface of thetransparent conductive film 74 exposed at the opening. In thisembodiment, the lower electrode film 80 is formed as a reflectionelectrode and has a three-layer structure formed of IZO, Ag and IZO, orITO, Ag and ITO or the like. At the pixel contact part, the transparentconductive film 74, the third silicon nitride film 78 and the lowerelectrode film 80 form an added capacitance. Incidentally, at the timeof patterning the lower electrode film 80, the transparent conductivefilm 74 is partly exposed to the etching environment. However, due toannealing carried out after the process of forming the transparentconductive film 74 and before the process of forming the lower electrodefilm 80, the transparent conductive film 74 has endurance to the etchingof the lower electrode film 80.

In this embodiment, at the time of forming the lower electrode film 80,an electrically conductive film 81 formed of the same electricallyconductive material as the lower electrode film 80 is formed on thethird silicon nitride film 78 in the frame area 44. In the frame area44, the third silicon nitride film 78 has the opening and theelectrically conductive film 81 is not formed on this opening. That is,the upper surface of the flattening film 72 is exposed at the opening inthe third silicon nitride film 78.

This opening is provided to extract, through an organic insulating film82, moisture and gas released from the flattening film 72 by heattreatment or the like after the process of forming the organicinsulating film 82. Therefore, providing an opening not only in thedisplay area 42 but also in the frame area 44 as described in thisembodiment enables efficient removal of moisture and gas released fromthe flattening film 72 in the frame area 44.

As the electrically conductive material used for the electricallyconductive film 81, an electrically conductive material that isdifferent from that of the lower electrode film 80 may be used. However,using the same material is desirable because the electrically conductivefilm 81 and the lower electrode film 80 can be formed simultaneously.

After the process of forming the lower electrode film 80, the organicinsulating film 82 to be the partition wall of the pixel area, calledbank or rib, is formed. As the organic insulating film 82,photosensitive acrylic resin, photosensitive polyimide resin or the likeis used as with the flattening film 72. The organic insulating film 82has an opening to expose the upper surface of the lower electrode film80 as a light-emitting area. It is preferable that the edge of theopening is gently tapered. If the edge of the opening is steeplytapered, it causes a coverage defect in an organic electro luminescencelayer 100 which is formed later.

Here, in this embodiment, the organic insulating film 82 is formed insuch a way as to close the opening provided in the electricallyconductive film 81 and the third silicon nitride film 78 in the framearea 44. That is, a part of the organic insulating film 82 enters theopenings, as shown in FIG. 3. Forming the organic insulating film 82 insuch a way as to close the opening in the third silicon nitride film 78can suppress melting or dissolution of the inner peripheral surface ofthe opening in the third silicon nitride film 78 in the subsequentprocess.

After the organic insulating film 82 is formed, organic materialsforming the organic electroluminescence layer 100 are stacked asmultiple layers. As the multilayer structure forming the organicelectroluminescence layer 100, a hole transport layer 102, alight-emitting layer 104 and an electron transport layer 106 are stackedin order from the side of the lower electrode film 80. In thisembodiment, the hole transport layer 102 and the electron transportlayer 106 are formed over a plurality of subpixels, and thelight-emitting layer 104 is formed for each subpixel. The organicelectroluminescence layer 100 may be formed by vapor deposition or maybe formed by coating solution or dispersion. The organicelectroluminescence layer 100 may be selectively formed for eachsubpixel or may be formed as a layer over the entire surface coveringthe display area 42. If the organic electroluminescence layer 100 isformed as a layer, a configuration to obtain white light at all thesubpixels and then extract a desired color wavelength portion by a colorfilter (not illustrated) can be employed. In this embodiment, theorganic electroluminescence layer 100 is selectively formed for eachsubpixel.

After the organic electroluminescence layer 100 is formed, an upperelectrode film 84 is formed. In this embodiment, since a top-emissionstructure is employed, the upper electrode film 84 is formed using atransparent conductive material such as IZO (indium zinc oxide) and asemitransparent electrode material such as Mg—Ag (magnesium-silveralloy). According to the order of forming the organicelectroluminescence layer 100, the lower electrode film 80 is the anodeand the upper electrode film 84 is the cathode. The upper electrode film84, the organic electroluminescence layer 100 and the lower electrodefilm 80 form the organic light-emitting diode 6. The lower electrodefilm 80 of the organic light-emitting diode 6 is connected to the drivethin-film transistor 12.

After the upper electrode film 84 is formed, a protection layer 90 isformed. One of the functions of the protection layer 90 is to preventinfiltration of outside moisture into the organic electroluminescencelayer 100, which is formed earlier. In this case, the protection layer90 needs to have a high gas barrier property. In this embodiment, as themultilayer structure of the protection layer 90, a multi layer structureincluding an inorganic film 92 such as a silicon nitride film or amultilayer film constituted by a silicon oxide film and a nitride film,an organic resin film 94 formed of an acrylic resin or the like, and aninorganic film 96 such as a silicon nitride film or a multilayer filmconstituted by a silicon oxide film and a nitride film is employed.

As shown in FIG. 3, a part of the upper electrode film 84 is provided,ranging from the upper surface to the lateral surface of the organicinsulating film 82. The upper surface of the electrically conductivefilm 81 provided on the lower surface of the organic insulating film 82,and the lower surface of the upper electrode film 84 are electricallyconnected to each other in the area where the organic insulating film 82is not formed.

In the frame area 44 shown in FIG. 3, in order to avoid exposing theupper electrode film 84 at the end surface of the display panel 40, theopening width of a mask used at the time of forming the upper electrodefilm 84 may be adjusted so that, for example, the upper electrode film84 is arranged only in the display area 42 and is not arranged in theframe area 44.

FIG. 4 is a schematic vertical cross-sectional view showing the displaypanel 40, taken along IV-IV shown in FIG. 2, that is, at a positionwhere the through hole 200A is provided in the display area 42. As shownin FIG. 4, the through hole 200A penetrates the array substrate 50 andthe upper electrode film 84, and a part of the upper electrode film 84is exposed at the inner surface of the through hole 200A. In thisembodiment, since the upper electrode film 84 is formed substantially inthe entirety of the display area 42, as described above, apart of theupper electrode film 84 is exposed at the inner surface of the throughhole 200 formed in the display area 42.

In this embodiment, the surface of the upper electrode film 84 exposedat this through hole 200 is oxidized. Thus, an oxidized part 84A isexposed at the inner surface of the through hole 200. As a method forforming the oxidized part 84A, for example, a laser beam is irradiatedat the time of forming the through hole 200 in the display area 42. Inthis process, the through hole 200 is formed and at the same time thesurface of the upper electrode film 84 exposed at the inner surface ofthe through hole 200 is oxidized by the heat of the laser beam, thusforming the oxidized part 84A.

The method for forming the oxidized part 84A is not limited to theirradiation with a laser beam. For example, after the through hole 200is mechanically formed, the inner surface of the through hole 200 may beheat-treated to form the oxidized part 84A.

With such a configuration, the oxidized part 84A suppresses infiltrationof moisture film 84 from the inner surface of the through hole 200 viathe upper electrode. Thus, the occurrence of a defect in the organicelectroluminescence layer can be suppressed.

Since a manufacturing method in which the upper electrode film 84 isformed by a single film forming process using a single mask is employed,improved quality of the upper electrode film 84 can be expected. Thatis, while it is possible to suppress infiltration of moisture by using aplurality of film forming processes using a plurality of masks and thusforming the upper electrode film 84 in which the area to form thethrough hole 200 is removed in advance so that the upper electrode film84 is not exposed at the through hole 200, such a manufacturing methodmay result in a plurality of upper electrode films 84 overlapping eachother in a boundary area due to misalignment in film formation or thelike. If a plurality of upper electrode films 84 overlap each other atapart, the film thickness at that part becomes thick. Meanwhile, amanufacturing method which includes forming the upper electrode film 84over a plurality of pixels by a single film forming process using asingle mask and subsequently the step of providing the through hole 200and the step of providing the oxidized part 84A, as in this embodiment,can achieve the state where the upper electrode film 84 has a shape as asingle film that surrounds the peripheries of the through hole 200, asshown in FIG. 2, and where the upper electrode film 84 exposed at theinner surface of the through hole 200 is oxidized. As a result, bothimproved quality of the upper electrode film 84 and a configuration tosuppress infiltration of moisture can be achieved. As described above,the step of providing the through hole 200 and the step of providing theoxidized part 84A may be carried out simultaneously or as separatesteps.

A person skilled in the art can readily think of various changes andmodifications within the technical scope of the invention. Such changesand modifications should be understood as being within the scope of theinvention. For example, addition, deletion or design change of acomponent, or addition, omission or condition change of a process, madeby a person skilled in the art to each of the embodiments, is includedin the scope of the invention, provided that it has essential featuresof the invention.

What is claimed is:
 1. A display device comprising: a display panelhaving a through hole in a display area including a plurality of pixels,wherein the display panel includes a substrate, and an organiclight-emitting diode including a first electrode provided above thesubstrate for each of the pixels, a second electrode provided over theplurality of pixels, and an organic electroluminescence layer arrangedbetween the first electrode and the second electrode, the through holepenetrates at least the second electrode, and the second electrodeincludes an oxidized part exposed at an inner surface of the throughhole.
 2. The display device according to claim 1, wherein the throughhole also penetrate the substrate.
 3. The display device according toclaim 1, wherein the second electrode has a shape as a single film thatsurrounds peripheries of the through hole.
 4. The display deviceaccording to claim 1, further comprising: a pixel circuit provided inthe pixels; a video signal line which supplies a voltage correspondingto a video signal, to the pixel circuit; and a scanning signal linewhich applies a voltage to a lighting thin-film transistor included inthe pixel circuit, wherein the video signal line and the scanning signalline arranged next to the through hole are curved to detour around thethrough hole.
 5. The display device according to claim 1, wherein astructure other than the display panel is arranged at a positioncorresponding to the through hole.
 6. The display device according toclaim 5, wherein the structure include at least one of camera, earphone,and microphone.
 7. A method of manufacturing a display device thatincludes a display panel having a display area including a plurality ofpixels, the method comprising: forming an organic light-emitting diodewhich includes a first electrode provided above a substrate for each ofthe pixels, a second electrode provided over the plurality of pixels,and an organic electroluminescence layer arranged between the firstelectrode and the second electrode; providing a through hole whichexposes a part of the second electrode, in the display area; andoxidizing apart of the second electrode exposed at an inner surface ofthe through hole.
 8. The method for manufacturing the display deviceaccording to claim 7, wherein a laser beam is irradiated in the displayarea, thus simultaneously carrying out the providing the through hole,and the oxidizing a part of the second electrode.
 9. The method ofmanufacturing the display device according to claim 7, wherein thesecond electrode is formed by a single film forming process using asingle mask.